z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data:21nC)
z Low Reverse transfer capacitances(Typical:15pF)
z 100% Single Pulse avalanche ene.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
ID.
CS7N60FA9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various pow.
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